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90 v/1.0 w , hermetically sealed, power mosfet optocoupler technical data features ? dual marked with device part number and dscc standard microcircuit drawing ? ac/dc signal & power switching ? compact solid-state bidirectional switch ? manufactured and tested on a mil-prf-38534 certified line ? qml-38534 ? mil-prf-38534 class h ? space level processing available ? hermetically sealed 8-pin dual in-line package ? small size and weight ? performance guaranteed over -55 c to +125 c ? connection a 0.8 a, 1.0 w ? connection b 1.6 a, 0.25 w ? 1500 vdc withstand test voltage ? high transient immunity ? 5 amp output surge current applications ? military and space ? high reliability systems ? standard 28 vdc and 48 vdc load driver ? standard 24 vac load driver ? aircraft controls ? ac/dc electromechanical and solid state relay replacement ? i/o modules ? harsh industrial environments eight-pin, hermetic, dual-in-line, ceramic packages. the devices operate exactly like a solid-state relay. the products are capable of operation and storage over the full military temperature range and can be purchased as a standard product (hssr-7110), with full mil-prf-38534 class h testing (hssr-7111), or from the dscc standard microcircuit drawing (smd) 5962-93140. these devices may be purchased with a variety of lead bend and plating options. see selection guide table for details. standard microcircuit (smd) parts are available for each lead style. description the hssr-7110, hssr-7111 and smd 5962-9314001 are single channel power mosfet optocouplers, constructed in functional diagrams truth table input output h closed l open caution: it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by esd. hssr-711x* 5962-9314001 *see matrix for available extensions connection a ac/dc connection 2 3 4 1 6 7 5 8 nc nc + + connection b dc connection i f v f i o v o 2 3 4 1 6 7 5 8 nc nc + + i f v f i o v o
2 all devices are manufactured and tested on a mil-prf-38534 certi- fied line and are included in the dscc qualified manufacturers list, qml-38534 for hybrid microcircuits. each device contains an algaas light emitting diode optically coupled to a photovoltaic diode stack which drives two discrete power mosfets. the device operates as a solid-state replacement for single-pole, normally open, (1 form a) relays used for general purpose switching of signals and loads in high reliability applications. the devices feature logic level input control and very low output on-resistance, making them suitable for both ac and dc loads. connection a, as shown in the functional diagram, allows the device to switch either ac or dc loads. connection b, with the polarity and pin configuration as shown, allows the device to switch dc loads only. the advantage of connection b is that the on-resistance is significantly reduced, and the output current capability increases by a factor of two. the devices are convenient replacements for mechanical and solid state relays where high component reliability with standard footprint lead configu- ration is desirable. devices may be purchased with a variety of lead bend and plating options. see selection guide table for details. standard microcircuit drawing (smd) parts are available for each package and lead style. the hssr-7110, hssr-7111, and smd 5962-93140 are designed to switch loads on 28 vdc power systems. they meet 80 v surge and 600 v spike requirements. outline drawing 8-pin dip through hole selection guideCpackage styles and lead configuration options agilent part # and options commercial hssr-7110 mil-prf-38534 class h hssr-7111 standard lead finish gold solder dipped option #200 butt joint/gold plate option #100 gull wing/soldered option #300 crew cut/gold plate option #600 smd part # prescript for all below 5962- either gold or soldered 9314001hpx gold plate 9314001hpc solder dipped 9314001hpa butt joint/gold plate 9314001hyc butt joint/soldered 9314001hya gull wing/soldered 9314001hxa crew cut/gold plate 9314001hzc crew cut/soldered 9314001hza 3.81 (0.150) min. 4.32 (0.170) max. 9.40 (0.370) 9.91 (0.390) 0.51 (0.020) max. 2.29 (0.090) 2.79 (0.110) 0.51 (0.020) min. 0.76 (0.030) 1.27 (0.050) 8.13 (0.320) max. 7.36 (0.290) 7.87 (0.310) 0.20 (0.008) 0.33 (0.013) 7.16 (0.282) 7.57 (0.298) note: dimensions in millimeters (inches).
3 recommended operating conditions parameter symbol min. max. units input current (on) i f(on) 520ma input voltage (off) v f(off) 0 0.6 v operating temperature t a -55 +125 c device marking absolute maximum ratings storage temperature range ........................................ -65 c to +150 c operating ambient temperature C t a .......................... -55 c to +125 c junction temperature C t j ......................................................... +150 c operating case temperature C t c ......................................... +145 c [1] lead solder temperature ............................................... 260 c for 10 s (1.6 mm below seating plane) average input current C i f ........................................................... 20 ma peak repetitive input current C i fpk ............................................ 40 ma (pulse width < 100 ms; duty cycle < 50%) peak surge input current C i fpk surge ....................................... 100 ma (pulse width < 0.2 ms; duty cycle < 0.1%) reverse input voltage C v r ............................................................... 5 v average output current C figure 2 connection a C i o ....................................................................... 0.8 a connection b C i o ...................................................................... 1.6 a single shot output current C figure 3 connection a C i opk surge (pulse width < 10 ms) ...................... 5.0 a connection b C i opk surge (pulse width < 10 ms) ................... 10.0 a output voltage connection a C v o ...................................................... -90 v to +90 v connection b C v o .......................................................... 0 v to +90 v average output power dissipation C figure 4 ....................... 800 mw [2] thermal resistance maximum output mosfet junction to case C q jc = 15 c/w esd classification (mil-std-883, method 3015) .......................................... ( dd ), class 2 compliance indicator,* date code, suffix (if needed) a qyywwz xxxxxx xxxxxxx xxx xxx 50434 country of mfr. agilent fscn* agilent designator dscc smd* pin one/ esd ident agilent p/n dscc smd* * qualified parts only
4 option description hermetic optocoupler options 100 surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. this option is available on commercial and hi-rel product. 200 lead finish is solder dipped rather than gold plated. this option is available on commercial and hi-rel product. dscc drawing part numbers contain provisions for lead finish. 300 surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly. this option is available on commercial and hi-rel product. this option has solder dipped leads. 600 surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. this option is available on commercial and hi-rel product. note: dimensions in millimeters (inches). 1.14 (0.045) 1.40 (0.055) 4.32 (0.170) max. 0.51 (0.020) max. 2.29 (0.090) 2.79 (0.110) 0.51 (0.020) min. 7.36 (0.290) 7.87 (0.310) 0.20 (0.008) 0.33 (0.013) 0.51 (0.020) min. 4.57 (0.180) max. 0.51 (0.020) max. 2.29 (0.090) 2.79 (0.110) 1.40 (0.055) 1.65 (0.065) 9.65 (0.380) 9.91 (0.390) 5?max. 4.57 (0.180) max. 0.20 (0.008) 0.33 (0.013) 3.81 (0.150) max. 1.02 (0.040) typ. 2.29 (0.090) 2.79 (0.110) 0.51 (0.020) min. 7.36 (0.290) 7.87 (0.310) 0.20 (0.008) 0.33 (0.013)
5 electrical specifications t a =-55 c to +125 c, unless otherwise specified. see note 9. group a, sub- parameter sym. group test conditions min. typ.* max. units fig. notes output withstand |v o(off) | 1, 2, 3 v f = 0.6 v, i o = 10 m a 90 110 v 5 voltage output connection r (on) 1, 2, 3 i f = 10 ma, i o = 800 ma, 0.40 1.0 w 6,7 3 on- a (pulse duration 30 ms) resistance connection i f = 10 ma, i o = 1.6 a, 0.12 0.25 b (pulse duration 30 ms) output leakage i o(off) 1, 2, 3 v f = 0.6 v, v o = 90 v, 10 -4 10 m a8 current input forward v f 1, 2, 3 i f = 10 ma 1.0 1.24 1.7 v 9 voltage input reverse v r 1, 2, 3 i r = 100 m a 5.0 v breakdown voltage input-output i i-o 1 rh 45%, t = 5 s, 1.0 m a 4, 5 insulation v i-o = 1500 vdc, t a = 25 c turn on time t on 9, 10, 11 i f = 10 ma, v dd = 28 v, 1.25 6.0 ms 1,10, i o = 800 ma 11, 12, 13 turn off time t off 9,10,11 i f = 10 ma, 0.02 0.25 ms 1,10, v dd = 28 v, i o = 800 ma 14,15 output transient dvo 9 v peak = 50 v, 1000 v/ m s17 rejection dt c m = 1000 pf, c l = 15 pf, r m 3 1 m w input-output dvio 9 v dd = 5 v, 500 v/ m s18 transient rejection dt v iCo(peak) = 50 v, r l = 20 k w , c l = 15 pf *all typical values are at t a = 25 c, i f(on) = 10 ma, v f(off) = 0.6 v unless otherwise specified.
6 caution: maximum switching frequency C care should be taken during repetitive switching of loads so as not to exceed the maximum output current, maximum output power dissipation, maximum case temperature, and maximum junction temperature. figure 1. recommended input circuit. typical characteristics all typical values are at t a = 25 c, i f(on) = 10 ma, v f(off) = 0.6 v unless otherwise specified. parameter symbol test conditions typ. units fig. notes output off-capacitance c o(off) v o = 28 v, f = 1 mhz 145 pf 16 output offset voltage |v os |i f = 10 ma, i o = 0 ma 2 m v197 input diode temperature d v f / d t a i f = 10 ma -1.4 mv/c coefficient input capacitance c in v f = 0 v, f = 1 mhz 20 pf 8 input-output capacitance c i-o v i-o = 0 v, f = 1 mhz 1.5 pf 4 input-output resistance r i-o v i-o = 500 v, t = 60 s 10 13 w 4 turn on time t on i fpk = 100 ma, 0.22 ms 1 6 with peaking i fss = 10 ma v dd = 28 v, i o = 800 ma notes: 1. maximum junction to case thermal resistance for the device is 15 c/w, where case temperature, t c , is measured at the center of the package bottom. 2. for rating, see figure 4. the output power p o rating curve is obtained when the part is handling the maximum average output current i o as shown in figure 2. 3. during the pulsed r on measurement (i o duration <30 ms), ambient (t a ) and case temperature (t c ) are equal. 4. device considered a two terminal device: pins 1 through 4 shorted together and pins 5 through 8 shorted together. 5. this is a momentary withstand test, not an operating condition. 6. for a faster turn-on time, the optional peaking circuit shown in figure 1 may be implemented. 7. v os is a function of i f , and is defined between pins 5 and 8, with pin 5 as the reference. v os must be measured in a stable ambient (free of temperature gradients). 8. zero-bias capacitance measured between the led anode and cathode. 9. standard parts receive 100% testing at 25 c (subgroups 1 and 9). smd and class h parts receive 100% testing at 25 c, 125 c and -55 c (subgroups 1 and 9, 2 and 10, 3 and 11 respectively). r1 = required current limiting resistor for i f (on) = 10 ma. r2 = pull-up resistor for v f (off) < 600 mv; if (v cc - v oh ) < 600 mv, omit r2. r3, c = optional peaking circuit. typical values r3 ( w ) i f (pk) (ma) hssr-7110 t on (ms) ? 330 100 33 10 (no pk) 20 40 100 2.0 1.0 0.48 0.22 * use second gate if i f (pk) > 50 ma reminder: tie all unused inputs to ground or v cc in 1/4 54actoo* 1/4 54actoo v cc (+5v) r2 1200 w r1 330 w r3 c 15 ? hssr-7110 2 3 4 1 6 7 5 8 i f v f +
7 figure 6. normalized typical output resistance vs. temperature. figure 5. normalized typical output withstand voltage vs. temperature. figure 7. typical on state output i-v characteristics. figure 2. maximum average output current rating vs. ambient temperature. figure 3. single shot (non-repetitive) output current vs. pulse duration. figure 4. output power rating vs. ambient temperature. figure 9. typical input forward current vs. input forward voltage. figure 8. typical output leakage current vs. temperature. 0 -55 t a ?ambient temperature ?? 1.0 0.4 155 125 95 65 5 -25 0.6 0.8 0.2 35 i o ?output current ?a connection ?a i f 10 ma q ca = 40?c/w q ca = 80?c/w i opk surge ?output current ?a 3 1000 pulse duration ?ms 8 5 400 200 6 7 4 9 10 11 12 600 800 i f 10 ma connection? connection? 10 0 -55 t a ?ambient temperature ?? 1.0 0.4 155 125 95 65 5 -25 0.6 0.8 0.2 35 p o ?output power dissipation ?w connection ?a i f 10 ma q ca = 40?c/w q ca = 80?c/w v f = 0.6 v i o = 10 ? -55 t a ?ambient temperature ?? 125 95 65 5 -25 0.92 35 normalized typical output withstand voltage 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 1.10 normalized typical output resistance -55 t a ?ambient temperature ?? 125 95 65 5 -25 0.6 35 0.8 1.0 1.2 1.4 1.6 1.8 connection ?a i f 10 ma i o = 800 ma (pulse duration 30 ms) v o ?output voltage ?v i o ?output current ?a -0.6 0.6 0.4 0.2 -0.2 -0.4 -0.4 0 -0.2 0 0.2 0.4 0.6 0.8 -0.8 -0.6 connection ?a i o 10 ma i o (pulse duration 30 ms) t a = 25? t a = 125? t a = -55? -11 10 -7 10 -8 10 -9 10 -10 10 i o(off) ?output leakage current ?a t a ?temperature ?? 125 95 65 20 35 connection a v f = 0.6 v v o = 90 v t a = 25? t a = 125? t a = -55? v f ?input forward voltage ?v 0.6 1.6 1.4 1.2 0.8 0.4 1.0 -1 10 -2 10 -4 10 -3 10 -5 10 -6 10 i f ?input forward current ?a
8 figure 10. switching test circuit for t on , t off . figure 11. typical turn on time vs. temperature. figure 12. typical turn on time vs. input current. figure 13. typical turn on time vs. voltage. figure 14. typical turn off time vs. temperature. figure 15. typical turn off time vs. input current. figure 16. typical output off capacitance vs. output voltage. 50% 10% 50% 90% t on t off p.w. = 15 ms v o i f pulse gen. z o = 50 w t f = t r = 5 ns r l gnd (c l includes probe and fixture capacitance) v dd c l = 25 pf i f monitor r (monitor) 200 w gnd monitor node v o hssr-7110 2 3 4 1 6 7 5 8 i f v f + t a ?temperature ?? 0.8 2.2 2.0 1.8 1.6 1.4 1.2 1.0 2.4 2.6 t on ?turn on time ?ms -55 125 95 65 5 -25 35 connection a i f = 10 ma v dd = 28 v i o = 800 ma i f ?input current ?ma 10 15 20 5 0.2 2.2 1.8 1.4 1.0 0.6 2.6 3.0 t on ?turn on time ?ms connection a v dd = 28 v i o = 800 ma t a = 25? v dd ?voltage ?v 10 30 20 0 0 1.0 0.8 0.6 0.4 0.2 1.2 1.4 t on ?turn on time ?ms 90 80 70 60 50 40 2.0 1.8 1.6 connection - a i f = 10 ma i o = 800 ma t a = 25? t a ?temperature ?? 13.2 14.6 14.4 14.2 14.0 13.8 13.6 13.4 14.8 15.0 t off ?turn off time ?? -55 125 95 65 5 -25 35 connection a i f = 10 ma v dd = 28 v i o = 800 ma 5 40 35 30 25 20 15 10 45 t off ?turn off time ?? i f ?input current ?ma 10 15 20 5 connection a v dd = 28 v i o = 800 ma t a = 25? v o(off) ?output voltage ?v 515 10 0 120 320 280 240 200 160 360 400 30 25 20 440 c o(off) ?output off capacitance ?pf connection a f = 1 mhz t a = 25?
9 figure 17. output transient rejection test circuit. monitor node pulse generator v peak + c m includes probe and fixture capacitance r m includes probe and fixture resistance c m r m input open v m v peak t f t r 90% 10% 90% 10% v m (max) 5 v overshoot on v peak is to be 10%. d t dv o or = t f (0.8) v (peak) t r (0.8) v (peak) hssr-7110 2 3 4 1 6 7 5 8 i f v f +
10 figure 18. input-output transient rejection test circuit. figure 19. voltage offset test setup. v i-o pulse generator + (c l includes probe plus fixture capacitance ) v o c l s 1 v dd v in b a r l hssr-7110 2 3 4 1 6 7 5 8 i f v f + overshoot on v i-o(peak) is to be 10% t f t r dt dv i-o or = (0.8) v i-o(peak) (0.8) v i-o(peak) t f t r 90% 10% 90% 10% v i-o(peak) v o(off) v o(off) (min) 3.25 v s 1 at a (v f = 0 v) v o(on) (max) 0.8 v o(on) s 1 at b (i f = 10 ma) v os + digital nanovoltmeter isothermal chamber hssr-7110 2 3 4 1 6 7 5 8 i f +
11 figure 21. thermal model. figure 20. burn-in circuit. note: in order to determine v out correctly, the case to ambient thermal impedance must be measured for the burn-in boards to be used. then, knowing q ca , determine the correct output current per figures 2 and 4 to insure that the device meets the derating requirements as shown. 2 3 4 1 6 7 5 8 r in v in 5.5 v 1.0 w r out v o (see note) 200 w 1.0 w r out hssr-7110 t je = led junction temperature t jf1 = fet 1 junction temperature t jf2 = fet 2 junction temperature t jd = fet driver junction temperature t c = case temperature (measured at center of package bottom) t a = ambient temperature (measured 6" away from the package) q ca = case-to-ambient thermal resistance all thermal resistance values are in ?/w t je q ca 104 15 t a t c t jd t jf1 15 15 t jf2 applications information thermal model the steady state thermal model for the hssr-7110 is shown in figure 21. the thermal resistance values given in this model can be used to calculate the temperatures at each node for a given operating condition. the thermal resistances between the led and other internal nodes are very large in comparison with the other terms and are omitted for simplicity. the components do, however, interact indirectly through q ca , the case-to-ambient thermal resistance. all heat generated flows through q ca , which raises the case temperature t c accord- ingly. the value of q ca depends on the conditions of the board design and is, therefore, determined by the designer. the maximum value for each out- put mosfet junction-to-case thermal resistance is specified as 15 c/w. the thermal resistance from fet driver junction-to-case is also 15 c/w. the power dissipation in the fet driver, however, is negligible in compar- ison to the mosfets. on-resistance and rating curves the output on-resistance, r on , specified in this data sheet, is the resistance measured across the output contact when a pulsed current signal (i o = 800 ma) is applied to the output pins. the use of a pulsed signal ( 30 ms) implies that each junction temperature is equal to the ambient and case temperatures. the steady- state resistance, r ss , on the other hand, is the value of the resistance measured across the output contact when a dc current signal is applied to the output pins for a duration sufficient to reach thermal equilibrium. r ss includes the effects of the temperature rise of each element in the thermal model. rating curves are shown in figures 2 and 4. figure 2 specifies the maximum average output current allowable for a given ambient temperature. figure 4 specifies the output power dissipation allowable for a given ambient temperature. above 55 c (for q ca = 80 c/w) and 107 c (for q ca = 40 c/w), the maximum allowable output current and power dissipation are related by the expression r ss = p o (max)/ (i o (max)) 2 from which r ss can be calculated. staying within the safe area assures that the steady-state junction temperatures remain less than 150 c. as an example, for t a = 95 c and q ca = 80 c/w, figure 2 shows that the output current should be limited to less than
reliability of the device. output circuit: unlike electro- mechanical relays, the designer should pay careful attention to the output on-resistance of solid state relays. the previous section, on- resistance and rating curves describes the issues that need to be considered. in addition, for strictly dc applications the designer has an advantage using connection b which has twice the output current rating as connec- tion a. furthermore, for dc-only applications, with connection b the on-resistance is considerably less when compared to connection a. output over-voltage protection is yet another important design consideration when replacing electro-mechanical relays with the hssr-7110. the output power mosfets can be protected using metal oxide varistors (movs) or transzorbs against voltage surges that exceed the 90 volt output withstand voltage rating. examples of sources of voltage surges are inductive load kick- backs, lightning strikes, and electro-static voltages that exceed the specifications on this data sheet. for more information on output load and protection refer to application note 1047. references: 1. application note 1047, low on-resistance solid state relays for high reliability applications. 2. reliability data for hssr-7110. mov is a registered trademark of ge/rca solid state. transzorb is a registered trademark of general semiconductor. mil-prf-38534 class h and dscc smd test program agilent technologies hi-rel optocouplers are in compliance with mil-prf-38534 class h. class h devices are also in compliance with dscc drawing 5962-93140. testing consists of 100% screen- ing and quality conformance inspection to mil-prf-38534. 610 ma. a check with figure 4 shows that the output power dissipation at t a = 95 c and i o = 610 ma, will be limited to less than 0.35 w. this yields an r ss of 0.94 w . design considerations for replacement of electro-mechanical relays the hssr-7110 family can replace electro-mechanical relays with comparable output voltage and current ratings. the following design issues need to be consid- ered in the replacement circuit. input circuit: the drive circuit of the electro-mechanical relay coil needs to be modified so that the average forward current driving the led of the hssr- 7110 does not exceed 20 ma. a nominal forward drive current of 10 ma is recommended. a recommended drive circuit with 5 volt v cc and cmos logic gates is shown in figure 1. if higher v cc voltages are used, adjust the current limiting resistor to a nominal led forward current of 10 ma. one important considera- tion to note is that when the led is turned off, no more than 0.6 volt forward bias should be applied across the led. even a few microamps of current may be sufficient to turn on the hssr- 7110, although it may take a considerable time. the drive circuit should maintain at least 5 ma of led current during the on condition. if the led forward current is less than the 5 ma level, it will cause the hssr-7110 to turn on with a longer delay. in addition, the power dissipation in the output power mosfets increases, which, in turn, may violate the power dissipation guidelines and affect the www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies obsoletes 5965-1142e 5968-0470e (11/99)

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